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| inchange semiconductor product specification silicon npn power transistors BUW48 description ? with to-3pn package. ? high current capability. ? fast switching speed. ? low collector saturation voltage applications ? switching regulators. ?motor control. ? high frequency and effic ency converters pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 30 a i cm collector current (pulse) 45 a i b base current 8 a i bm base current (peak) 12 a p c collector power dissipation t c =25 ?? 150 w t j junction temperature 175 ?? t stg storage temperature -65~175 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BUW48 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =50ma; i c =0 7 v v ceo(sus) collector-emitter sustaining voltage i c =0.2a; i b =0;l=25mh 60 v v cesat-1 collector-emitter saturation voltage i c =20a; i b =2a 0.6 v v cesat-2 collector-emitter saturation voltage i c =15a; i b =1.5a 0.5 v v besat base-emitter saturation voltage i c =40a; i b =4a 2.1 v i cex collector cut-off current v ce =rated ;v be =-1.5v t c =125 ?? 1 3 ma i ebo emitter cut-off current v eb =5v; i c =0 1 ma f t transition frequency v ce =15v,f=15mhz;i c =1a 8 switching times : t on turn-on time 1.2 1.5 | s t s storage time 0.6 1.1 | s t f fall time i c =40a; i b1 =- i b2 =4a v cc =60v 0.17 0.25 | s thermal characteristics symbol parameter max unit r th j-case thermal resistance junction case 1 ?? /w inchange semiconductor product specification 3 silicon npn power transistors BUW48 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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